Patents by Inventor Hisashi Shimakage

Hisashi Shimakage has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a superconductor film
    Patent number: 6929820
    Abstract: A method includes forming an as-grown film of a superconductor composed of a MgB2 compound which is made by simultaneous evaporation of magnesium and boron. The as-grown film is superconductive without an annealing process to make the film superconductive. The method can be applied to fabricate an integrated circuit of the superconductor film, because a high temperature annealing process to make the as-grown film superconductive is not needed.
    Type: Grant
    Filed: September 9, 2002
    Date of Patent: August 16, 2005
    Assignee: National Institute of Information and Communications Technology
    Inventors: Hisashi Shimakage, Atsushi Saito, Akira Kawakami, Zhen Wang
  • Method of forming a superconductor film
    Patent number: 6835696
    Abstract: The present invention provides methods forming the superconductor of as-grown film of MgB2 which is made with magnesium and boron ejected from a magnesium target and a boron target, respectively, each in simultaneously sputtering process. The as-grown film composed of a compound of magnesium and boron is a superconductor without being annealed. The present invention can be applied to fabricate an integrated circuit of superconductor film, because the high temperature annealing process for the as-grown film of MgB2 is unnecessary.
    Type: Grant
    Filed: September 6, 2002
    Date of Patent: December 28, 2004
    Assignee: Communications Research Laboratory Independent Administrative Institute
    Inventors: Atsushi Saito, Akira Kawakami, Hisashi Shimakage, Zhen Wang
  • Method of forming a superconductor film
    Publication number: 20030130130
    Abstract: Method of forming an as-grown film of a superconductor composed of the MgB2 compound which is made by simultaneous evaporation of magnesium and boron is provided. The as-grown film is superconductive without an annealing process to make the film superconductive. The present invention can be applied to fabricate an integrated circuit of the superconductor film, because the high temperature annealing process to make the as-grown film superconductive is not needed.
    Type: Application
    Filed: September 9, 2002
    Publication date: July 10, 2003
    Applicant: Communications Research Laboratory, Independent Administrative Institution
    Inventors: Hisashi Shimakage, Atsushi Saito, Akira Kawakami, Zhen Wang
  • Method of forming a superconductor film
    Publication number: 20030096711
    Abstract: The present invention provides methods forming the superconductor of as-grown film of MgB2 which is made with magnesium and boron ejected from a magnesium target and a boron target respectively each in simultaneously sputtering process. The as-grown film composed of a compound of magnesium and boron is a superconductor without annealed. The present invention can be applied to fabricate an integrated circuit of superconductor film, because the high temperature annealing process for the as-grown film of MgB2 is not needed.
    Type: Application
    Filed: September 6, 2002
    Publication date: May 22, 2003
    Applicant: Communications Research Laboratory, Independent Administrative Institution
    Inventors: Atsushi Saito, Akira Kawakami, Hisashi Shimakage, Zhen Wang